MBT3906DW1T1G

MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features http://onsemi.com (3) (2) (1) hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7−inch/3,000 Unit Tape and Reel These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Q1 Q2 (4) (5) (6) 1 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value −40 −40 −5.0 −200 Unit Vdc Vdc Vdc mAdc SOT−363/SC−88 CASE 419B STYLE 1 MARKING DIAGRAM 6 A2 M G G 1 A2 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) HBM Class 2 MM Class B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Total Package Dissipation (Note 1) TA = 25°C Thermal R...