CY62136FV30

CY62136FV30 MoBL® 2-Mbit (128K x 16) Static RAM Features ■ ■ Very high speed: 45 ns Temperature ranges ❐ Industrial: –40°C to +85°C ❐ Automotive: –40°C to +125°C ■ Wide voltage range: 2.20V–3.60V ■ ■ automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: ■ ■ ■ ■ Deselected (CE HIGH) Outputs are disabled (OE HIGH) Both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) Write operation is active (CE LOW and WE LOW) Pin compatible with CY62136V, CY62136CV30/CV33, and CY62136EV30 Ultra low standby power ❐ Typical standby current: 1µA ❐ Maximum standby current: 5 µA (Industrial) ■ Ultra low active power ❐ Typical active current: 1.6 mA at f = 1 MHz (45 ns speed) ■ Easy memory expansion with CE, and OE features ■ ■ ■ Automatic power down when deselected CMOS for optimum speed and power Available in Pb-free 48-ball VFBGA and 44-pin TSOP II packages Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from IO pins (IO0 through IO7) is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from IO pins (IO8 through IO15) is written into the location specified on the address pins ...