IGBT
Preliminary
SIM150D12SV3
VCES = 1200V Ic = 150A VCE(ON) typ. = 2.7V @ Ic = 150A
“HALF-BRIDGE” IGBT Module
Features
▪ U...
Description
Preliminary
SIM150D12SV3
VCES = 1200V Ic = 150A VCE(ON) typ. = 2.7V @ Ic = 150A
“HALF-BRIDGE” IGBT Module
Features
▪ Update NPT Technology design ▪ 10µs Short circuit capability ▪ Low turn-off loss ▪ Short tail current for over 18KHz ▪ Positive VCE(on) temperature coefficient
Applications
▪ SMPS & Electrolysis Machine ▪ High Power Inverters ▪ High Frequency inverter-type Welding machines ▪ Servo Controls ▪ UPS, EPS or Robotics
PKG
V3
62
mm
Absolute Maximum Ratings @ Tj=25
Symbol
VCES VGES IC ICM IF IFM TSC Viso Tj Tstg Weight Mounting Torque
(per leg) Condition
VGE = 0V,
Parameter
Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Power Terminal Screw : M5 Terminal connection Screw : M5 TC = 80 TC = 80 TC = 80
Ratings
1200 20 150 300 150 300 10
Unit
V V A A A A
IC = 1.0mA
µs
V
AC 1 minute
2500 -40 ~ 150 -40 ~ 125 360 3.5 3.5
g Nm Nm
Electrical Characteristics @ Tj = 25
Symbol
V(BR)CES VCE(ON) VGE(th) ICES IGES VFM
(unless otherwise specified) Min
1200 -
Parameters
Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop
Typ
2.7 5.0
Max
3.1 6.0 1.0
± 200
Unit
Test conditions
VGE = 0V, IC = 1.0m...
Similar Datasheet
- SIM150D12SV3 IGBT - SemiWell Semiconductor