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2SD2562

Part Number	2SD2562
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlington Power Transistor
Published	Dec 9, 2010
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Hig...
Datasheet	2SD2562 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.
) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.
5V(Max)@ (IC= 10A, IB= 10mA) ·Complement to Type 2SB1649 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for series regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC ...

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