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IXTP1R6N100D2 Dataheets PDF



Part Number IXTP1R6N100D2
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description N-Channel MOSFET
Datasheet IXTP1R6N100D2 DatasheetIXTP1R6N100D2 Datasheet (PDF)

Depletion Mode MOSFET N-Channel IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 D VDSX = ID(on) >  RDS(on) 1000V 1.6A 10 TO-252 (IXTY) G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings 1000 V 20 V 30 V 100 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C .

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Depletion Mode MOSFET N-Channel IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 D VDSX = ID(on) >  RDS(on) 1000V 1.6A 10 TO-252 (IXTY) G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings 1000 V 20 V 30 V 100 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 100A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS= - 5V TJ = 125C RDS(on) VGS = 0V, ID = 0.8A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 Characteristic Values Min. Typ. Max. 1000 V - 2.5 - 4.5 V 100 nA 2 A 25 A 10  1.6 A G S D (Tab) TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages • Easy to Mount • Space Savings • High Power Density Applications • Audio Amplifiers • Start-Up Circuits • Protection Circuits • Ramp Generators • Current Regulators • Active Loads © 2017 IXYS CORPORATION, All Rights Reserved DS100185D(9/17) IXTY1R6N100D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 30V, ID = 0.8A, Note 1 Ciss Coss Crss VGS = -10V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 5V, VDS = 500V, ID = 0.8A RG = 5 (External) Qg(on) Qgs Qgd VGS = 5V, VDS = 500V, ID = 0.8A RthJC RthCS TO-220 Characteristic Values Min. Typ. Max. 0.65 1.10 S 645 pF 43 pF 11 pF 27 ns 65 ns 34 ns 41 ns 27.0 nC 1.6 nC 13.5 nC 1.25 C/W 0.50 C/W Safe-Operating-Area Specification Symbol SOA Test Conditions VDS = 800V, ID = 75mA, TC = 75C, Tp = 5s Characteristic Values Min. Typ. Max. 60 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD IF = 1.6A, VGS = -10V, Note 1 trr IRM QRM IF = 1.6A, -di/dt = 100A/s VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 1.3 V 970 ns 9.96 A 4.80 μC IXTA1R6N100D2 IXTP1R6N100D2 Note 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ID - Amperes IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Fig. 1. Output Characteristics @ TJ = 25oC VGS = 5V 1V 0V -1V - 2V - 3V 2 4 6 8 10 12 14 VDS - Volts 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 Fig. 3. Output Characteristics @ TJ = 125oC VGS = 5V 1V 0V -1V - 2V - 3V 4 8 12 16 20 24 28 32 VDS - Volts 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 Fig. 5. Drain Current @ TJ = 100oC VGS = - 3.50V - 3.75V - 4.00V - 4.25V - 4.50V - 4.75V 1.E-07 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 VDS - Volts RO - Ohms ID - Amperes ID - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25oC 4.0 VGS = 5V 3.5 2V 1V 3.0 0V 2.5 2.0 -1V 1.5 1.0 0.5 0.0 0 - 2V - 3V 10 20 30 40 50 60 70 80 VDS - Volts 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 1E-07 1E-08 Fig. 4. Drain Current @ TJ = 25oC VGS = - 3.25V - 3.50V - 3.75V - 4.00V - 4.25V - 4.50V - 4.75V 1E-09 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 VDS - Volts 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 -4.8 Fig. 6. Dynamic Resistance vs. Gate Voltage ∆VDS = 700V - 100V TJ = 25oC TJ = 100oC -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 VGS - Volts ID - Amperes ID - Amperes © 2017 IXYS CORPORATION, All Rights Reserved RDS(on) - Normalized Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 VGS = 0V 2.2 I D = 0.8A 1.8 1.4 1.0 0.6 0.2 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade 2.5 VDS = 30V 2.0 Fig. 9. Input Admittance 1.5 TJ = 125oC 1.0 25oC - 40oC 0.5 0.0 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 VGS - Volts Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature 1.3 1.2 VGS(off) @ VDS = 25V 1.1 BVDSX @ VGS = - 5V 1.0 0.9 IS - Amperes g f s - Siemens RDS(on) - Normalized IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Fig. 8. RDS(on) Normalized to ID = 0.8A Value vs. Drain Current 2.6 2.4 VGS = 0V 5V .


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