Document
Depletion Mode MOSFET
N-Channel
IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2
D
VDSX = ID(on) >
RDS(on)
1000V 1.6A
10
TO-252 (IXTY)
G S
Symbol
VDSX VGSX VGSM
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220
Maximum Ratings
1000
V
20
V
30
V
100
W
- 55 ... +150
C
150
C
- 55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250A
VGS(off)
VDS = 25V, ID = 100A
IGSX
VGS = 20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
TJ = 125C
RDS(on)
VGS = 0V, ID = 0.8A, Note 1
ID(on)
VGS = 0V, VDS = 50V, Note 1
Characteristic Values Min. Typ. Max.
1000
V
- 2.5
- 4.5 V
100 nA
2 A 25 A
10
1.6
A
G S D (Tab)
TO-263 AA (IXTA)
G S D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
• Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount • Space Savings • High Power Density
Applications
• Audio Amplifiers • Start-Up Circuits • Protection Circuits • Ramp Generators • Current Regulators • Active Loads
© 2017 IXYS CORPORATION, All Rights Reserved
DS100185D(9/17)
IXTY1R6N100D2
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 30V, ID = 0.8A, Note 1
Ciss Coss Crss
VGS = -10V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times VGS = 5V, VDS = 500V, ID = 0.8A RG = 5 (External)
Qg(on) Qgs Qgd
VGS = 5V, VDS = 500V, ID = 0.8A
RthJC RthCS
TO-220
Characteristic Values Min. Typ. Max.
0.65 1.10
S
645
pF
43
pF
11
pF
27
ns
65
ns
34
ns
41
ns
27.0
nC
1.6
nC
13.5
nC
1.25 C/W
0.50
C/W
Safe-Operating-Area Specification
Symbol SOA
Test Conditions VDS = 800V, ID = 75mA, TC = 75C, Tp = 5s
Characteristic Values Min. Typ. Max.
60
W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
VSD
IF = 1.6A, VGS = -10V, Note 1
trr
IRM QRM
IF = 1.6A, -di/dt = 100A/s VR = 100V, VGS = -10V
Characteristic Values Min. Typ. Max.
0.8
1.3 V
970
ns
9.96
A
4.80
μC
IXTA1R6N100D2 IXTP1R6N100D2
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
ID - Amperes
IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
0
Fig. 1. Output Characteristics @ TJ = 25oC
VGS = 5V 1V 0V
-1V
- 2V
- 3V
2
4
6
8
10
12
14
VDS - Volts
1.6 1.4 1.2
1 0.8 0.6 0.4 0.2
0 0
Fig. 3. Output Characteristics @ TJ = 125oC
VGS = 5V 1V 0V
-1V
- 2V
- 3V
4
8
12
16
20
24
28
32
VDS - Volts
1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06
Fig. 5. Drain Current @ TJ = 100oC
VGS = - 3.50V - 3.75V - 4.00V - 4.25V - 4.50V - 4.75V
1.E-07 0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
RO - Ohms
ID - Amperes
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25oC
4.0
VGS = 5V
3.5
2V
1V
3.0
0V 2.5
2.0 -1V
1.5
1.0
0.5
0.0 0
- 2V
- 3V
10
20
30
40
50
60
70
80
VDS - Volts
1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 1E-07 1E-08
Fig. 4. Drain Current @ TJ = 25oC
VGS = - 3.25V - 3.50V - 3.75V - 4.00V - 4.25V - 4.50V - 4.75V
1E-09 0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04
-4.8
Fig. 6. Dynamic Resistance vs. Gate Voltage
∆VDS = 700V - 100V
TJ = 25oC TJ = 100oC
-4.6
-4.4
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
VGS - Volts
ID - Amperes
ID - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
RDS(on) - Normalized
Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6
VGS = 0V
2.2
I D = 0.8A
1.8
1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
2.5 VDS = 30V
2.0
Fig. 9. Input Admittance
1.5
TJ = 125oC
1.0
25oC
- 40oC
0.5
0.0
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
VGS - Volts
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
1.3
1.2
VGS(off) @ VDS = 25V 1.1
BVDSX @ VGS = - 5V 1.0
0.9
IS - Amperes
g f s - Siemens
RDS(on) - Normalized
IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2
Fig. 8. RDS(on) Normalized to ID = 0.8A Value
vs. Drain Current
2.6
2.4
VGS = 0V
5V
.