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IXTA08N50D2

IXYS Corporation

N-Channel MOSFET

Depletion Mode MOSFET N-Channel IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 D VDSX = ID(on) >  RDS(on) 500V 800mA 4.6 TO-2...


IXYS Corporation

IXTA08N50D2

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Description
Depletion Mode MOSFET N-Channel IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 D VDSX = ID(on) >  RDS(on) 500V 800mA 4.6 TO-252 (IXTY) G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings 500 V 20 V 30 V 60 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 25A VGS(off) VDS = 25V, ID = 25A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V TJ = 125C RDS(on) VGS = 0V, ID = 400mA, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 Characteristic Values Min. Typ. Max. 500 V - 2.5 - 4.5 V 50 nA 1 A 10 A 4.6  800 mA G S D (Tab) TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features Normally ON Mode  International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Easy to Mount Space Savings High Power Density Applications Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads © 2017 IXYS CORPORATION, All Rights Reserved DS100178E(9/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 30V...




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