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IXTH6N50D2

IXYS Corporation

N-Channel MOSFET

Depletion Mode MOSFET N-Channel IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 VDSX = ID(on) > ≤ RDS(on) 500V 6A 500mΩ TO-263 AA (...


IXYS Corporation

IXTH6N50D2

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Description
Depletion Mode MOSFET N-Channel IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 VDSX = ID(on) > ≤ RDS(on) 500V 6A 500mΩ TO-263 AA (IXTA) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Maximum Ratings 500 V ±20 V ±30 V 300 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250μA VGS(off) VDS = 25V, ID = 250μA IGSX VGS = ±20V, VDS = 0V IDSX(off) VDS = VDSX, VGS= - 5V TJ = 125°C RDS(on) VGS = 0V, ID = 3A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 Characteristic Values Min. Typ. Max. 500 V - 2.5 - 4.5 V ±100 nA 5 μA 50 μA 500 mΩ 6 A G S D (Tab) TO-220AB (IXTP) GD S D (Tab) TO-247 (IXTH) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Easy to Mount Space Savings High Power Density Applications Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads © 2011 IXYS CORPORATION, All Rights Reserved DS100177B(03/11) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 30V, ID = 3A, Note 1 Ciss C...




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