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IXTP3N50D2

IXYS Corporation

N-Channel MOSFET

Depletion Mode MOSFET N-Channel IXTA3N50D2 IXTP3N50D2 D VDSX = ID(on) >  RDS(on) 500V 3A 1.5 G S Symbol VDSX VGSX...


IXYS Corporation

IXTP3N50D2

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Description
Depletion Mode MOSFET N-Channel IXTA3N50D2 IXTP3N50D2 D VDSX = ID(on) >  RDS(on) 500V 3A 1.5 G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 500 V 20 V 30 V 125 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V TJ = 125C RDS(on) VGS = 0V, ID = 1.5A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 Characteristic Values Min. Typ. Max. 500 V - 2.0 - 4.5 V 100 nA 5 A 50 A 1.5  3 A TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features Normally ON Mode  International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Easy to Mount Space Savings High Power Density Applications Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads © 2017 IXYS CORPORATION, All Rights Reserved DS100148D(4/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 30V, ID = 1.5A, Note 1 Ciss Coss Crss VGS = -1...




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