D2058

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2058 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current IB Base current PC Collector dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE 60 60 7 3 0.5 1.5 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A VBE Base-emitter on voltage IC=0.5A;VCE=5V ICBO Collector cut-off current VCB=60V;IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain IC=0.5A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=5V COB Collector output capacitance f=1MHz;VCB=10V Switching times ton Turn-on time ts Storage time tf Fall time IC=2.0A; IB1=-IB2=0.2A VCC=30V ,RL=15A hFE Classifications O Y G 60-120 100-200 150-300 Product S...