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PDMB600B12 Dataheets PDF



Part Number PDMB600B12
Manufacturers Nihon Inter Electronics Corporation
Logo Nihon Inter Electronics Corporation
Description IGBT
Datasheet PDMB600B12 DatasheetPDMB600B12 Datasheet (PDF)

QS043-402-20334 (2/4) IGBT Module-Dual □ : CIRCUIT 600 A,1200V PDMB600B12 140 130 110 □ : OUTLINE DRAWING 36 43.8 10 13.8 11.5 4 - Ø6.5 1 2 3 5 5(E1) 4(G1) 4 65 4-M4 LABEL 4 24 35 14.5 40 110 130 (C2E1) 1 (E2) 2 (C1) 3 7(G2) 6(E2) 3-M8 7 6 14.5 20.5 10 Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Junction Tempe.

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QS043-402-20334 (2/4) IGBT Module-Dual □ : CIRCUIT 600 A,1200V PDMB600B12 140 130 110 □ : OUTLINE DRAWING 36 43.8 10 13.8 11.5 4 - Ø6.5 1 2 3 5 5(E1) 4(G1) 4 65 4-M4 LABEL 4 24 35 14.5 40 110 130 (C2E1) 1 (E2) 2 (C1) 3 7(G2) 6(E2) 3-M8 7 6 14.5 20.5 10 Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Junction Temperature Range Storage Temperature Range (Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink め け ト ル ク Busbar to Main Terminal Mounting Torque □ DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor M4 M8 Rated Value Unit V V A W ℃ ℃ V(RMS) N・m (kgf・cm) 1,200 ±20 600 1,200 2,800 -40~+150 -40~+125 2,500 3(30.6) 1.4(14.3) 10.5(107) : ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies ターンオン ターンオフ Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 1200V,VGE= 0V VGE= ±20V,VCE= 0V IC= 600A,VGE= 15V VCE= 5V,IC= 600mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= 600V RL= 1Ω RG= 1Ω VGE= ±15V Min. - - - 4 - - - - - Typ. - - 1.9 - 50,000 0.25 0.40 0.25 0.80 Max. 12 1.0 2.4 8 - 0.45 0.70 0.35 1.10 Unit mA μA V V pF Characteristic コ レ ク タ Collector-Emitter Cut-Off Current ゲ ー ト れ Gate-Emitter Leakage Current コレクタ・エミッタ Collector-Emitter Saturation Voltage ゲ ー ト し き い Gate-Emitter Threshold Voltage Input Capacitance スイッチング Switching Time μs □フリーホイーリングダイオードの : FREE Item Forward Current Characteristic Peak Forward Voltage Reverse Recovery Time □ WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃) Symbol IF IFM Symbol VF trr Rated Value 600 1,200 Test Condition IF= 600A,VGE= 0V IF= 600A,VGE= -10V di/dt= 1200A/μs Min. - - Typ. 1.9 0.25 Max. 2.4 0.35 Unit A DC 1ms Unit V μs : THERMAL CHARACTERISTICS Symbol Rth(j-c) Test Condition Junction to Case Min. - - Typ. - - Max. Unit 0.044 ℃/W 0.085 Characteristic IGBT Thermal Impedance Diode インター www.DataSheet.in QS043-402-20334 (3/4) PDMB600B12 Fig.1- Output Characteristics (Typical) 1200 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25℃ 16 TC=25℃ I C=300A 1200A VGE=20V 1000 12V 10V Collector to Emitter Voltage V CE (V) 15V 14 12 10 8 6 4 2 0 600A Collector Current I C (A) 800 9V 600 400 8V 200 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 600 500 400 16 TC=125℃ I C=300A 1200A Collector to Emitter Voltage V CE (V) 600A 12 10 8 6 4 2 0 Collector to Emitter Voltage V CE (V) 14 RL=1Ω TC=25℃ 14 Gate to Emitter Voltage V GE (V) 12 10 8 VCE =600V 300 6 400V 200 100 0 0 800 1600 2400 3200 4000 200V 4 2 0 4800 0 4 8 12 16 20 Gate to Emitter.


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