Document
QS043-402-20334 (2/4)
IGBT Module-Dual
□ : CIRCUIT
600 A,1200V
PDMB600B12
140 130 110
□ : OUTLINE DRAWING
36
43.8
10 13.8 11.5
4 - Ø6.5
1
2
3 5
5(E1) 4(G1)
4 65 4-M4
LABEL
4
24 35
14.5
40 110 130
(C2E1) 1
(E2) 2
(C1) 3
7(G2) 6(E2)
3-M8
7 6
14.5
20.5
10
Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Junction Temperature Range Storage Temperature Range (Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink め け ト ル ク Busbar to Main Terminal Mounting Torque □ DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor M4 M8 Rated Value Unit V V A W ℃ ℃ V(RMS) N・m (kgf・cm)
1,200 ±20 600 1,200 2,800 -40~+150 -40~+125 2,500 3(30.6) 1.4(14.3) 10.5(107)
: ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies ターンオン ターンオフ Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 1200V,VGE= 0V VGE= ±20V,VCE= 0V IC= 600A,VGE= 15V VCE= 5V,IC= 600mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= 600V RL= 1Ω RG= 1Ω VGE= ±15V Min. - - - 4 - - - - - Typ. - - 1.9 - 50,000 0.25 0.40 0.25 0.80 Max. 12 1.0 2.4 8 - 0.45 0.70 0.35 1.10 Unit mA μA V V pF
Characteristic コ レ ク タ Collector-Emitter Cut-Off Current ゲ ー ト れ Gate-Emitter Leakage Current コレクタ・エミッタ Collector-Emitter Saturation Voltage ゲ ー ト し き い Gate-Emitter Threshold Voltage Input Capacitance スイッチング Switching Time
μs
□フリーホイーリングダイオードの : FREE Item Forward Current Characteristic Peak Forward Voltage Reverse Recovery Time □
WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃)
Symbol IF IFM Symbol VF trr Rated Value 600 1,200 Test Condition IF= 600A,VGE= 0V IF= 600A,VGE= -10V di/dt= 1200A/μs Min. - - Typ. 1.9 0.25 Max. 2.4 0.35 Unit A
DC 1ms
Unit V μs
: THERMAL CHARACTERISTICS Symbol Rth(j-c) Test Condition Junction to Case Min. - - Typ. - - Max. Unit 0.044 ℃/W 0.085
Characteristic IGBT Thermal Impedance Diode
インター
www.DataSheet.in
QS043-402-20334 (3/4)
PDMB600B12
Fig.1- Output Characteristics (Typical)
1200
Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25℃
16
TC=25℃ I C=300A 1200A
VGE=20V
1000
12V
10V
Collector to Emitter Voltage V CE (V)
15V
14 12 10 8 6 4 2 0
600A
Collector Current I C (A)
800
9V
600
400
8V
200
7V
0 0 2 4 6 8 10
0
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
Gate to Emitter Voltage V GE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800 700 600 500 400 16
TC=125℃ I C=300A 1200A
Collector to Emitter Voltage V CE (V)
600A
12 10 8 6 4 2 0
Collector to Emitter Voltage V CE (V)
14
RL=1Ω TC=25℃
14
Gate to Emitter Voltage V GE (V)
12 10 8
VCE =600V
300 6
400V
200 100 0 0 800 1600 2400 3200 4000
200V
4 2 0 4800
0
4
8
12
16
20
Gate to Emitter.