Document
IGBT MODULE
CIRCUIT
Dual 50A 1200V
PDMB50B12
OUTLINE DRAWING
4- fasten- tab No 110
Dimension(mm)
Approximate Weight : 220g
MAXMUM RATINGS (Tc=25°C) Item
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms
Symbol
VCES VGES IC ICP PC Tj Tstg VISO FTOR
PDMB50B12
1200 +/ - 20 50 100 250 -40 to +150 -40 to +125 2500 2
Unit
V V A W °C °C V N•m
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time
Symbol
ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff
Test Condition
VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=50A,VGE=15V VCE=5V,IC=50mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 12 ohm RG= 20 ohm VGE= +/- 15V
Min.
4.0 -
Typ.
1.9 4200 0.25 0.40 0.25 0.80
Max.
1.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10
Unit mA µA V V pF µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 50 100
Unit A Typ.
1.9 0.2
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=50A,VGE=0V IF=50A,VGE=-10V,di/dt=100A/µs
Min.
-
Max.
2.4 0.3
Unit V µs Unit °C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
Max.
0.43 0.7
www.DataSheet.in
PDMB50B12
Fig.1- Output Characteristics (Typical)
100
Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25 ℃
16
TC=25 ℃ I C=25A 100A
VGE =20V 15V
12V
10V
Collector to Emitter Voltage V CE (V)
14 12 10 8 6 4 2 0
50A
Collector Current I C (A)
75
9V
50
8V
25
7V
0 0 2 4 6 8 10
0
4
8
12
16
20
Collector to Emitter Voltage V CE (V)
Gate to Emitter Voltage V GE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800 700 600 500 400 16
TC=125 ℃ IC=25A 100A
Collector to Emitter Voltage V CE (V)
Collector to Emitter Voltage V CE (V)
14
RL=12Ω TC=25℃
14
Gate to Emitter Voltage V GE (V)
50A
12 10 8 6 4 2 0
12 10 8
VCE =600V
300 6
400V
200 4
200V
100 0 0 50 100 150 200 250 300 350 2 0
0
4
8
12
16
20
Gate to Emitter Voltage V GE (V)
Total Gate Charge Qg (nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
20000 10000 5000 1.4
Fig.6- Collector Current vs. Switching Time (Typical)
VCC=600V R G=20Ω VGE=±15V TC=25℃
Cies
VGE=0V f=1MHZ TC=25℃
1.2 1 0.8 0.6 0.4 0.2 0
tOFF
2000 1000 500 200 100 50 20
Coes
Switching Time t (μs)
Capacitance C (pF)
tf
Cres
tON tr
0.1
0.2
0.5
1
2
5
10
20
50
100
200
0
10
20
30
40
50
Collector to Emitter Voltage VCE (V)
Collector Cu.