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PDMB50B12 Dataheets PDF



Part Number PDMB50B12
Manufacturers Nihon Inter Electronics Corporation
Logo Nihon Inter Electronics Corporation
Description IGBT
Datasheet PDMB50B12 DatasheetPDMB50B12 Datasheet (PDF)

IGBT MODULE CIRCUIT Dual 50A 1200V PDMB50B12 OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PDMB50B12 1200 +/ - 20 50 100 250 -40 to +150 -40 to +125 2500 2 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) .

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IGBT MODULE CIRCUIT Dual 50A 1200V PDMB50B12 OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PDMB50B12 1200 +/ - 20 50 100 250 -40 to +150 -40 to +125 2500 2 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=50A,VGE=15V VCE=5V,IC=50mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 12 ohm RG= 20 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 4200 0.25 0.40 0.25 0.80 Max. 1.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 50 100 Unit A Typ. 1.9 0.2 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=50A,VGE=0V IF=50A,VGE=-10V,di/dt=100A/µs Min. - Max. 2.4 0.3 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.43 0.7 www.DataSheet.in PDMB50B12 Fig.1- Output Characteristics (Typical) 100 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 16 TC=25 ℃ I C=25A 100A VGE =20V 15V 12V 10V Collector to Emitter Voltage V CE (V) 14 12 10 8 6 4 2 0 50A Collector Current I C (A) 75 9V 50 8V 25 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 600 500 400 16 TC=125 ℃ IC=25A 100A Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 14 RL=12Ω TC=25℃ 14 Gate to Emitter Voltage V GE (V) 50A 12 10 8 6 4 2 0 12 10 8 VCE =600V 300 6 400V 200 4 200V 100 0 0 50 100 150 200 250 300 350 2 0 0 4 8 12 16 20 Gate to Emitter Voltage V GE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 20000 10000 5000 1.4 Fig.6- Collector Current vs. Switching Time (Typical) VCC=600V R G=20Ω VGE=±15V TC=25℃ Cies VGE=0V f=1MHZ TC=25℃ 1.2 1 0.8 0.6 0.4 0.2 0 tOFF 2000 1000 500 200 100 50 20 Coes Switching Time t (μs) Capacitance C (pF) tf Cres tON tr 0.1 0.2 0.5 1 2 5 10 20 50 100 200 0 10 20 30 40 50 Collector to Emitter Voltage VCE (V) Collector Cu.


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