IGBT
IGBT MODULE
CIRCUIT
Dual 200A 1200V
OUTLINE DRAWING
PDMB200B12C
4- fasten- tab No 110
Dimension(mm)
Approximate Weig...
Description
IGBT MODULE
CIRCUIT
Dual 200A 1200V
OUTLINE DRAWING
PDMB200B12C
4- fasten- tab No 110
Dimension(mm)
Approximate Weight : 500g
MAXMUM RATINGS (Tc=25°C) Item
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms
Symbol
VCES VGES IC ICP PC Tj Tstg VISO FTOR
PDMB200B12C
1200 +/ - 20 200 400 960 -40 to +150 -40 to +125 2500 3
Unit
V V A W °C °C V Nm
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time
Symbol
ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff
Test Condition
VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=200A,VGE=15V VCE=5V,IC=200mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 3 ohm RG= 2 ohm VGE= +/- 15V
Min.
4.0 -
Typ.
1.9 16600 0.25 0.40 0.25 0.80
Max.
4.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10
Unit mA µA V V pF µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 200 400
Unit A Typ.
1.9 0.2
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=200A,VGE=0V IF=200A,VGE=-10V,di/dt=400A/µs
Min.
-
Max.
2.4 0.3
Unit V µs Unit °C/W
THERMAL CHARACTERISTICS Ch...
Similar Datasheet
- PDMB200B12C IGBT - Nihon Inter Electronics Corporation
- PDMB200B12C2 IGBT - Nihon Inter Electronics Corporation