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WFP2N60B Dataheets PDF



Part Number WFP2N60B
Manufacturers WINSEMI SEMICONDUCTOR
Logo WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Datasheet WFP2N60B DatasheetWFP2N60B Datasheet (PDF)

www.DataSheet.in B WFP2N60 FP2N60B Silicon N-Channel MOSFET Features ■ 2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is spe.

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www.DataSheet.in B WFP2N60 FP2N60B Silicon N-Channel MOSFET Features ■ 2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. G D S TO220 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note 2) (Note 1) (Note 3) (Note1) Parameter Value 600 2.0 1.3 8 ±30 140 6.4 5.5 54 0.43 -55~150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min 0.5 - Value Typ - Max 2.3 62.5 Units ℃/W ℃/W ℃/W Rev. D Nov.2009 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T02-2 www.DataSheet.in B WFP2N60 FP2N60B Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain−source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate charge (gate−source Qg plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge Qgs Qgd tf toff VDD = 320 V, VGS = 10 V, nC ID = 2 A (Note4,5) 1.7 4.5 RG=25 Ω (Note4,5) 20 25 9.0 60 60 12 Symbol IGSS V(BR)GSS IDSS Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 600 V, VGS = 0 V VDS = 480 V, Tc = 125°C Min ±30 600 2 - Typ. 0.5 4.5 2.25 280 45 4.5 10 25 Max ±100 10 100 4 4.7 330 55 7 28 55 Unit nA V μA μA V V/℃ V Ω S V(BR)DSS ΔBVDSS/ ΔTJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton ID = 250 μA, VGS = 0 V ID=250μA, Referenced to 25℃ VDS = 10 V, ID =250 μA VGS = 10 V, ID =1A VDS = 50 V, ID =1A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =300 V, ID = 2 A pF ns Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V, dIDR / dt = 100 A / μs Min - Type 180 0.72 Max 2 8 1.4 - Unit A A V ns μC Note 1.Repeativity rating .


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