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B WFP2N60 FP2N60B
Silicon N-Channel MOSFET
Features
■ 2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply.
G D S
TO220
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note 2) (Note 1) (Note 3) (Note1)
Parameter
Value
600 2.0 1.3 8 ±30 140 6.4 5.5 54 0.43 -55~150 300
Units
V A A A V mJ mJ V/ns W W/℃ ℃ ℃
Thermal Characteristics
Symbol
RQJC RQCS RQJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min
0.5 -
Value Typ
-
Max
2.3 62.5
Units
℃/W ℃/W ℃/W
Rev. D Nov.2009
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-2
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B WFP2N60 FP2N60B
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain−source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate charge (gate−source Qg plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge Qgs Qgd tf toff VDD = 320 V, VGS = 10 V, nC ID = 2 A (Note4,5) 1.7 4.5 RG=25 Ω (Note4,5) 20 25 9.0 60 60 12
Symbol
IGSS V(BR)GSS IDSS
Test Condition
VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 600 V, VGS = 0 V VDS = 480 V, Tc = 125°C
Min
±30 600 2 -
Typ.
0.5 4.5 2.25 280 45 4.5 10 25
Max
±100 10 100 4 4.7 330 55 7 28 55
Unit
nA V μA μA V V/℃ V Ω S
V(BR)DSS ΔBVDSS/ ΔTJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton
ID = 250 μA, VGS = 0 V ID=250μA, Referenced to 25℃ VDS = 10 V, ID =250 μA VGS = 10 V, ID =1A VDS = 50 V, ID =1A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =300 V, ID = 2 A
pF
ns
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge
Symbol
IDR IDRP VDSF trr Qrr
Test Condition
IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V, dIDR / dt = 100 A / μs
Min
-
Type
180 0.72
Max
2 8 1.4 -
Unit
A A V ns μC
Note 1.Repeativity rating .