WFP2N60

WFP2N60 Silicon N-Channel MOSFET Features ■ 2A,650V(Type.), RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 15nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. G D S TO220 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note 2) (Note 1) (Note 3) (Note1) Parameter Value 650 2.0 1.3 6 ±30 120 5.4 5.5 54 0.43 -55~150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min 0.5 - Value Typ - Max 2.3 62.5 Units ℃/W ℃/W ℃/W Rev. D Nov.2009 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T02-2 www.DataSheet.in WFP2N60 Electrical Characteristics (Tc ...