WFP12N60

www.DataSheet.in P12N60 WF WFP Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature (Note 2) (Note 1) (Note 3) (Note1) 7.6 48 ±30 880 25 4.5 250 2.0 -55~150 300 A A V mJ mJ V/ns W W/℃ ℃ ℃ Drain Source Voltage Continuous Drain Current(@Tc=25℃) Parameter Value 600 12 Units V A Maximum lead Temperature for soldering purposes Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Value Min - Typ 0.5 - Max 0.50 62.5 Units ℃/W ℃/W ℃/W Rev.A Oct.2010 Copyright@...