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WFY4101

WINSEMI SEMICONDUCTOR

Trench Power MOSFET


Description
www.DataSheet.in WFY4101 Trench Power MOSFET −23 −20 V, Single P−Channel, SOT SOT− Features ■ -3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V ■ −1.8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated General Description This Power MOSFET is produced using Winsemi’s advanced MOS technology. This lat...



WINSEMI SEMICONDUCTOR

WFY4101

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