WFY3P02

WFY3P02 −20V, P−Channel MOSFET , Features ■ -3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V ■ −1.8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated General Description This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection G S D SOT-23 Marking: H03F Absolute Maximum Ratings Symbol VDSS ID Drain Source Voltage Continuous Drain Current(Note 1) Steady State t≤10s Steady State t≤10s Steady State t=10s C=100pF,RS = 1500Ω Tc=25℃ Tc=85℃ Tc=25℃ Tc=25℃ Tc=25℃ Tc=85℃ Tc=25℃ Parameter Value -20 −2.8 -1.7 -3.2 0.80 1.25 -1.8 -1.3 0.42 -7.5 ±8 225 -55~150 260 Units V A PD ID PD IDM VGS ESD TJ, Tstg TL Total Power Dissipation(Note 1) Continuous Drain Current(Note 2) Total Power Dissipation(Note 2) Drain Current Pulsed Gate to Source Voltage ESD Capability (Note 3) Junction and Storage Temperature W A W A V V ℃ ℃ Maximum lead Temperature for soldering purposes Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, da...