WSP10D100

WSP10D100 Power Schottky Rectifier Features ■ 10A(1×5A),100V ■ VF(max)=0.60V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure ■ Guard ring for over voltage protection, High reliability ■ Maximum Junction Temperature Range(175℃) K General Description Dual center tap Schottky rectifiers suited for High frequency switch power supply and Free wheeling diodes, polarity protection applications. A1 K A2 TO220 Absolute Maximum Ratings Symbol VDRM VDC IF(RMS) IF(AV) IFSM IRRM dv/dt TJ, Tstg Parameter Repetitive peak reverse voltage Maximum DC blocking voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Critical rate of rise of reverse voltage Junction Temperature Storage Temperature per diode per device Value 100 100 10 5 10 150 1 10000 175 -40~150 Units V V A A A A V/ns ℃ ℃ Thermal Characteristics Symbol RQJC RQCS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Value Min 0.3 Typ - Max 1.3 - Units ℃/W ℃/W Rev. C Nov.2008 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T02-2 www.DataSheet.in WSP10D100 Electrical Characteristics (per diode) Characteristics Reverse leakage current Symbol IR Test Condition VR = VRRM Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min - Typ. - Max 10 5 0.75 0.60 0.85 0.7 Unit μA mA IF= 5A Forward voltage drop VF IF= 210A Note :tp = 380 μs, δ < 2% - 0.71 0.56 0.78 0.65 V 2/4 Copyri...