Document
WTD9575
Surface Mount P-Channel Enhancement Mode POWER MOSFET 3
P b Lead(Pb)-Free
1 GATE
DRAIN
DRAIN CURRENT -15 AMPERES DRAIN SOURCE VOLTAGE -60 VOLTAGE
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90m Ω@V GS =-10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package
Features:
SOURCE
2
4 1 1. GATE 2.4 DRAIN 3. SOURCE 2
3
D-PAK / (TO-252)
Maximum Ratings(T =25 C Unless Otherwise Specified)
A
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current
1
Symbol VDS VGS ID IDM PD RθJC RθJA TJ,Tstg
Value -60 ±25 -15 -9.5 -45 36 3.5 110 - 55~+150
Unit V
A
Total Power Dissipation(TC=25˚C) Maximum Thermal Resistace Junction-case Maximum Thermal Resistace Junction-ambient Operating Junction and Storage Temperature Range
W ˚C/W ˚C/W ˚C
Device Marking
WTD9575=9575
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Electrical Characteristics (TA = 25℃
Characteristic Unless otherwise noted) Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS=0,ID=-250μA Gate-Source Threshold Voltage VDS=VGS,ID=-250μA Gate-Source Leakage current VGS=±25V Drain-SourceLeakage Current(Tj=25˚C) VDS=-60V,VGS=0 Drain-SourceLeakage Current(Tj=70˚C) VDS=-48V,VGS=0 Drain-SourceOn-Resistance VGS=-10V,ID=-12A VGS=-4.5V,ID=-9A Forward Transconductance VDS=-10V,I D=-9A BVDSS VGS(Th) IGSS -60 -1.0 IDSS -25 V -3.0 ±100 -1 μA nA
RDS(on)
-
-
90 120
mΩ
gfs
-
14
-
S
Dynamic
Input Capacitance VGS=0V,VDS=-25V,f=1.0MHz Output Capacitance VGS=0V,VDS=-25V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=-25V,f=1.0MHz Ciss Coss Crss 1660 160 100 2660 pF
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Switching
Turn-on Delay Time2 VDS=-30V,VGS=-10V,ID=-9A,RD=3.3Ω,RG=3.3Ω Rise Time VDS=-30V,VGS=-10V,ID=-9A,RD=3.3Ω,RG=3.3Ω Turn-off Delay Time VDS=-30V,VGS=-10V,ID=-9A,RD=3.3Ω,RG=3.3Ω Fall Time VDS=-30V,VGS=-10V,ID=-9A,RD=3.3Ω,RG=3.3Ω Total Gate Charge2 VDS=-48V,VGS=-4.5V,ID=-9A Gate-Source Charge VDS=-48V,VGS=-4.5V,ID=-9A Gate-Source Change VDS=-48V,VGS=-4.5V,ID=-9A td(on) tr td(off) tf Qg Qgs Qgd 10 19 46 53 17 5 6 ns 27 nC
Source-Drain Diode Characteristics
Forward On Voltage2 VGS=0V,IS=-9A Reverse Recovery Time VGS=0V,IS=-9A,dl/dt=100A/µs Reverse Recovery Charge VGS=0V,IS=-9A,dl/dt=100A/µs
Note: 1. Pulse width limited by safe operating area. 2. Pulse width ≤ 300μs, duty cycle ≤ 2%.
VSD T rr Q rr
-
56 159
-1.2 -
V ns nC
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55 50 45 -10V -6.0V 40 35
-I D ,DRAIN CURRENT (A)
40 35 30 25 20 15 10 5 0
0
-4.5V
ID ,Drain Current (A)
TC =25°C
-5.0V
30 25 20 15 10 5
TC =150˚C
-10V -6.0V -5.0V -4.5V
VG=-3.0V
VG=-3.0V
2
4
6
8
10
0
0
2
FIG.1 Typical Output Characteristics
1400 1200 1000 2.0
-VDS ,DRAIN-TO-SOURCE VOLTAGE(V)
Fig.2 Typical Output Characteristics
VDS ,Drain-to-source Voltage(V)
4
6
8
10
12
I D = -9A TC = 25˚C Normalized RDs(on)
1.8 1.6 1.4 1.2 1.0 0.8
0.6 0.4 -50
I D = -12A VG = -10V
RDs(on) (mΩ)
800
600 400 200
1
Fig.3 On-Resistance v.s. Gate Voltage
15.0 12.5 2.0 10.0 7.5 2.5
-VGS ,Gate-to-source Voltage(V)
4
7
10
0
50
100
150
Fig.4 Normalized OnResistance
Tj ,Junction Temperature(˚C)
-VGS(th)(V)
1.4
Tj = 150˚C Tj = 25˚C -IS(A)
1.5
5.0 1.0 2.5 0.0 0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
-50
Fig.5 Forward Characteristics of Reverse Diode
-VDS ,Source-to-Drain Voltage(V)
Fig.6 Gate Threshold Voltage v.s. Junction Temperature
Tj ,Junction Temperature(˚C)
0
50
100
150
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12 10000
f = 1.0MHz
-VGS , Gate to Source Voltage(V)
10
I D = -9A VDS = -48V
1000
Ciss
8
C(pF)
6
Coss
100
4 2
Crss
0
0
10
20
30
40
10
1
5
9
13
17
21
25
29
Fig 7. Gate Charge Characteristics
100
QG , Total Gate Charge(nC)
-VDS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response(Rθ jc )
Duty factor = 0.5
10
100us
0.2 0.1 0.1 0.05 0.02 0.01
Single pulse
-I D(A)
1ms 10ms 100ms DC TC = 25˚C Single Pulse
0.1 0.1
1 10 100 1000
PDM
t T
1
Duty factor = t / T Peak Tj=PDM x Rθ jc + Tc
t, Pulse Width(s)
0.001 0.01 0.1 1
-VDS , Drain-to-Source Voltage(V)
0.01 0.00001
0.0001
Fig 9. Maximum Safe Operation Area
VDS 90%
Fig 10. Effective Transient Thermal Impedance
VG QG
-4.5V
QGS 10% VGS t d(on) t r t d(off) t f
QGD
Charge
Q
Fig 11. Switching Time Circuit
Fig.12 Gate Charge Waveform
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D-PAK / (TO-252) Outline Dimension
Unit:mm
E A
4
D-PAK
G H J
1
2
3
B
M D C L K
Dim A B C D E G H J K L M
Min
6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90
6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50
Max
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