DatasheetsPDF.com

WTD4A60S Dataheets PDF



Part Number WTD4A60S
Manufacturers WINSEMI SEMICONDUCTOR
Logo WINSEMI SEMICONDUCTOR
Description Sensitive Gate Triac
Datasheet WTD4A60S DatasheetWTD4A60S Datasheet (PDF)

www.DataSheet.in D4A60S WT WTD Sensitive Gate Triac Features � � � � � Repetitive Peak off -State Voltage:600V R.M.S On-State Current(IT(RMS)=4A) Low On-State Voltage (1.6V(Max.)@ITM High Commutation dv/dt Sensitive Gate Triggering 4 Mode General Description Sensitive gate triggering Triac is suitable for direct couplingto TTL , CMOS and application such as various logic Functions, low power AC switching applications,such as fanspeed,small light controllers and home appliance equipment. Absol.

  WTD4A60S   WTD4A60S


Document
www.DataSheet.in D4A60S WT WTD Sensitive Gate Triac Features � � � � � Repetitive Peak off -State Voltage:600V R.M.S On-State Current(IT(RMS)=4A) Low On-State Voltage (1.6V(Max.)@ITM High Commutation dv/dt Sensitive Gate Triggering 4 Mode General Description Sensitive gate triggering Triac is suitable for direct couplingto TTL , CMOS and application such as various logic Functions, low power AC switching applications,such as fanspeed,small light controllers and home appliance equipment. Absolute Maximum Ratings (TJ=25℃ symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM TJ TSTG unless otherwise specified) Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current condition Tc=109℃ One Cycle, 50Hz/60Hz, Ratings 600 4.0 30/33 Units V A A A2s W W A V ℃ ℃ Peak,Non-Repetitive I 2t Peak Gate Power Dissipation Average Gate Power dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature 4.5 1.5 0.1 1.0 7.0 -40~125 -40~150 Thermal Characteristics Symbol RӨJC RӨJA Parameter Thermal Resistance Junction to case(DC) Thermal resistance Junction to Ambient(DC) Value 2.6 100 Units ℃/W ℃/W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. www.DataSheet.in WTD4A60S Electrical Characteristics(Tc=25℃ unless otherwise noted) Symbol IDRM Current VTM I+GT1 III+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c Voltage at Commutation IH Holding Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅳ Ⅰ Ⅱ Ⅲ Ⅳ Non-Trigger Gate Voltage Critical Rate of Rise Off-State TJ=125℃,VD=1/2VDRM TJ=125℃,[di/dt]c=-2.0A/ms, VD=2/3VDRM 5 10 V/µs mA Gate Trigger Voltage VD=6V,RL=10Ω 0.2 1.6 1.4 2.0 V Gate Trigger Current VD=6V,RL=10Ω 8 5 12 1.4 1.4 V Items Repetitive Peak Off-State conditions VD=VDRM,Single Phase, Half Wave TJ=125℃ IT=6A,Inst.Measurement Ratin Min - Typ - Max 1.0 1.6 5 5 Unit mA V mA 2/5 Steady, all for your advance www.DataSheet.in WTD4A60S Fig1.Gate Characteristics Fig.2 On-State Voltage Fig.3 On State Current vs.Maximum Power Dissipation Fig.4 On State Current vs.Allowable Case Temperature Fig.5 surge On-State Current Rating (Non-Repetitive) Fig.6 Gate Trigger Voltage vs. Junction Temperature 3/5 Steady, all for your advance www.DataSheet.in WTD4A60S Fig.7 Gate Trigger Current vs. Junction Temperature Fig.8 Transient Thermal Impedance Fig.9 Gate Trigger Characteristics Test Circuit 4/5 Steady, all for your advance www.DataSheet.in WTD4A60S TO252 Package Dimension TO-252 Unit:mm 5/5 Steady, all for your advance .


WTD40N03 WTD4A60S WTD772


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)