WTPB16A60SW

www.DataSheet.in WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=16A ■ Low on-state voltage: VTM=1.55V(Max.)@ IT=22.5A ■ High Commutation dV/dt. General Description General purpose swiTJhing and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol VDRM /VPRM IT(RMS) ITSM I2t PGM PG(AV) dI/dt IFGM VRGM TJ, Tstg Parameter Peak Repetitive Forward Blocking Voltage(gate open) Forward Current RMS (All Conduction Angles, TJ=58℃) Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz) Circuit Fusing Considerations (tp= 10 ms) Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us) Average Gate Power — Forward, (Over any 20ms period) Critical rate of rise of on-state current TJ=125℃ ITM = 20A; IG = 200mA; dIG/dt = 200mA/µs Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS) Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS) Junction Temperature Storage Temperature (Note 1) Value 600 16 160/168 144 5 1 50 4 10 -40~125 -40~150 Units V A A A2s W W A/μs A V ℃ ℃ Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may swiTJh to the on-stat...