WTP772 WTP882
PNP/NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
TO-251
1.BASE 2.COLLECTOR 3.EMITTER 1 2 3
ABSOLU...
WTP772 WTP882
PNP/
NPN Epitaxial Planar
Transistors
P b Lead(Pb)-Free
TO-251
1.BASE 2.COLLECTOR 3.EMITTER 1 2 3
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
Rating Symbol
Collector-Emitter Voltage Collector-B ase Voltage Emitter-B ase Voltage Collector Current (DC) Collector Current (Pulse)1 B ase Current Total Device Dissipation Tc=25 C TA=25°C Junction Temperature Storage, Temperature
VCEO VCB O VEB O I C(DC) IC (Pulse) IB (Pulse) PD Tj Tstg
PNP/WTP772
NPN/WTP882
-30 -40 -5.0 -3.0 -7.0 -0.6 10 1.4 150
30 40 5.0 3.0
Unit
7.0 0.6
Vdc Vdc Vdc Adc Adc Adc W C C
-55 to +150
Device Marking
WT P 7 7 2 =B 7 7 2 , WT P 8 8 2 =D8 8 2
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (I C= -10/ 10 mAdc, I B =0)
Collector-B ase B reakdown Voltage (I C = -100/ 100 µAdc, I E =0) Emitter-B ase B reakdown Voltage (I E = -100/ 100 µAdc, I C =0) Collector Cutoff Current (VCE = -30/ 30 Vdc, I B =0) Collector Cutoff Current (VCB = -40/ 40 Vdc, I E =0) Emitter Cutoff Current (VEB = -6.0/ 6.0Vdc, I C =0)
N OT E : 1 . P W 3 5 0 us , duty cycle 2 %
V(B R)CEO -30/ 30 V(B R)CB O -40/ 40 V(B R)EB O -5.0/ 5.0 I CE0 I CB O I EB O -
-1.0/ 1.0 -1.0/ 1.0 -1.0/ 1.0
Vdc Vdc Vdc uAdc uAdc uAdc
WEITRON
http://www.weitron.com.tw
www.DataSheet.in
WTP772 WTP882
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min TYP Max Unit
ON CHARACTERISTICS
DC Current Gain (IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc) DC Current ...