BF9024SPD-M

BF9024SPD-M BYD Microelectronics Co., Ltd P-Channel MOSFET and Schottky Diode General Description The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. 8 7 6 5 Features MOSFET z z z VDS (V) = -20V ID = -2.7A Low on-state resistance RDS (on) < 90mΩ . (VGS = -4.5V) RDS (on) < 120mΩ .(VGS = -2.5V) VF=0.42V K D 1 2 3 4 1,2 Anode; 3 Source; 4 Gate 5,6 Drain; 7,8 Kathode K: Kathode;D: Drain Schottky Diode z Absolute Maximum Ratings (Ta = 25℃) Parameter Mosfet Drain to Source Voltage (MOSFET and Schottky) Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Maximun Power Dissipation Channel Temperature Storage Temperature Schottky Diode Reverse Voltage Average Forward Current Pulsed Forward Current Maximun Power Dissipation Storage Temperature a a Symbol Ratings Unit VDSS VGSS ID(DC) ID(pulse) PD Tch Tstg VKA IF IFM PD Tstg -20 ±8 -2.7 -10 1.1 150 -55~+150 20 1 7 0.96 -55~+150 V V A A W ℃ ℃ V A A W ℃ Note a. Mounted on FR4 Board of 1”x1”. Caution: These values must not be exceeded under any conditions. Ordering Information z z BF9024SPD-M DFNWB3*1.8-8L ES-BYD-WDZCE03D-070 Rev.A/1 Page 1of 6 Datasheet www.DataSheet.in BYD Microelectronics Co., Ltd. BF9024SPD-M Electrical Characteristics (TC = 25℃) Characteristic Mosfet Symbol IDSS IGSS VGS(th) |yfs| RDS(on) Ciss Coss Crss Test Conditions VDS= -20V,VGS=0V VGS= ± 8V,VDS=0V VDS=VG...