J608

Ordering number : ENN6995 2SJ608 P-Channel Silicon MOSFET 2SJ608 Ultrahigh Speed Switching Applications Features Package Dimensions unit : mm 2085A [2SJ608] 10.5 1.9 4.5 1.2 Low ON-resistance. Ultrahigh speed switching. Low-voltage drive. Mounting height 9.5mm. Meets radial taping. 2.6 1.4 1.2 7.5 1.0 8.5 1.6 0.5 0.5 1 2 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP Ratings -30 ± 20 --4 -16 1.4 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=± 16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--2A Ratings min --30 --1 ± 10 --1.0 2.9 4.2 --2.4 typ max Unit V µA µA V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or...