4AM16
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, I D = –4 A High speed switching High density mounting Suitable for H-brided motor driver
Outline
www.DataSheet.in
4AM16
Absolute Maximu...
