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4AM13

Hitachi Semiconductor
Part Number 4AM13
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel/P-Channel Power MOS FET Array
Published Nov 12, 2010
Detailed Description 4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resista...
Datasheet PDF File 4AM13 PDF File

4AM13
4AM13

Overview
4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.
4 Ω, VGS = 10 V, ID = 1.
5 A P-channel: RDS(on) ≤ 0.
45 Ω, VGS = –10 V, ID = –1.
5 A • • • • • Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver www.
DataSheet.
in 4AM13 Outline Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Rating Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 D...


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