4AM17
Silicon N/P Channel MOS FET High Speed Power Switching
ADE-208-729 (Z) 1st. Edition February 1999 Features
Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A 4 V gate drive devices. High density mounting
Outline
SP-12
12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D
34
56
78
910 11...
