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LME49722 Dataheets PDF



Part Number LME49722
Manufacturers National Semiconductor
Logo National Semiconductor
Description High Fidelity Dual Audio Operational Amplifier
Datasheet LME49722 DatasheetLME49722 Datasheet (PDF)

LME49722 Low Noise, High Performance, High Fidelity Dual Audio Operational Amplifier March 27, 2008 LME49722 Low Noise, High Performance, High Fidelity Dual Audio Operational Amplifier General Description The LME49722 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications. Combining advanced leading-edge process technology with state-of-the-art circuit design, the LME49722 audio .

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LME49722 Low Noise, High Performance, High Fidelity Dual Audio Operational Amplifier March 27, 2008 LME49722 Low Noise, High Performance, High Fidelity Dual Audio Operational Amplifier General Description The LME49722 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications. Combining advanced leading-edge process technology with state-of-the-art circuit design, the LME49722 audio operational amplifiers deliver superior audio signal amplification for outstanding audio performance. The LME49722 combines extremely low voltage noise density (1.9nV/√Hz) rate with vanishingly low THD+N (0.00002%) to easily satisfy the most demanding audio applications. To ensure that the most challenging loads are driven without compromise, the LME49722 has a high slew rate of ±22V/µs and an output current capability of ±28mA. Further, dynamic range is maximized by an output stage that drives 2kΩ loads to within 1V of either power supply voltage. The LME49722 has a wide supply range of ±2.5V to ±18V. Over this supply range the LME49722 maintains excellent common-mode and power supply rejection, and low input bias current. This Audio Operational Amplifier achieves outstanding AC performance while driving complex loads with values as high as 100pF with gain value greater than 2. Directly interchangeable with LME49720, LM4562 and LME49860 for similar operating voltages. ■ PSRR ■ Slew Rate ■ THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz) RL = 2kΩ RL = 600Ω 120dB (typ) ±22V/μs (typ) 0.00002% (typ) 0.00002% (typ) 135dB (typ) 50nA (typ) ±0.02mV (typ) ■ Open Loop Gain (RL = 600Ω) ■ Input Bias Current ■ Voltage Offset Features ■ ■ ■ ■ Easily drives 600Ω loads Optimized for superior audio signal fidelity Output short circuit protection PSRR and CMRR exceed 120dB (typ) Applications ■ Ultra high quality audio amplification ■ High fidelity preamplifiers, phono preamps, and multimedia Key Specifications ■ Wide Operating Voltage Range ■ Equivalent Noise (Frequency = 1kHz) ±2.5V to ±18V 1.9nV/√Hz (typ) 2.8nV/√Hz (typ) ■ High performance professional audio ■ High fidelity equalization and crossover networks with active filters ■ Equivalent Noise (Frequency = 10Hz) ■ High performance line drivers and receivers ■ Low noise industrial applications including test, measurement, and ultrasound Typical Application 30057910 FIGURE 1. Wide Bandwidth Low Noise Low Drift Amplifier © 2008 National Semiconductor Corporation 300579 www.national.com www.DataSheet.in LME49722 Connection Diagram 30057955 Order Number LME49722MA See NS Package Number — M08A www.national.com 2 www.DataSheet.in LME49722 Absolute Maximum Ratings (Notes 1, 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (VS = VCC-VEE) 38V Storage Temperature −65°C to 150°C Input Voltage (V-) - 0.7V to (V+) + 0.7V Output Short Circuit (Note 3) ESD Susceptibility (Note 4) ESD Susceptibility (Note 5) Continuous 2000V 200V Junction Temperature (TJMAX) Thermal Resistance  θJA  θJC 150°C 154°C/W 27°C/W Operating Ratings Temperature Range TMIN ≤ TA ≤ TMAX Supply Voltage Range ±2.5V ≤ VS ≤ ±18V −40°C ≤ TA ≤ 85°C Electrical Characteristics for the LME49722 Symbol Parameter Conditions AV = 1, VOUT = 3Vrms THD+N Total Harmonic Distortion + Noise RL = 2kΩ RL = 600Ω IMD GBWP SR FPBW Intermodulation Distortion Gain Bandwidth Product Slew Rate Full Power Bandwidth (Notes 1, 2) The following specifications apply for VS = ±15V and ±18V, RL = 2kΩ, fIN = 1kHz unless otherwise specified. Limits apply for TA = 25°C, LME49722 Typical (Note 6) 0.00002 0.00002 0.00002 55 ±22 12 45 ±15 Limit (Note 7) Units (Limits) 0.00009 % % (max) % MHz (min) V/μs (min) MHz AV = 1, VOUT = 3VRMS Two-tone, 60Hz & 7kHz 4:1 fIN = 100kHz AV = 1, VOUT = 10VP-P VOUT = 1VP-P, –3dB referenced to output magnitude at f = 1kHz AV = –1, 10V step, CL = 100pF 0.1% error range fBW = 20Hz to 20kHz f= 1kHz VS = ±15V VS = ±18V f = 10Hz VS = ±15V VS = ±18V f = 1kHz f = 10Hz VCM = 0V ΔVS = 20V (Note 8) fIN = 1kHz fIN = 20kHz VCM = 0V VS = ±15V VS = ±18V –40°C ≤ TA ≤ 85°C VCM = 0V VS = ±15V VS = ±18V ts eINV Settling time Equivalent Input Voltage Noise 1.2 0.25 1.9 1.9 2.8 3.2 2.6 6 ±0.02 120 136 135 50 53 0.1 ±0.7 110 0.35 μs μVRMS (max) nV√Hz eN Equivalent Input Voltage Density 2.5 nV√Hz (max) nV√Hz nV√Hz In VOS PSRR ISOCH-CH Current Noise Density Offset Voltage Power Supply Rejection Ratio Channel-to-Channel Isolation  pA/√Hz  pA/√Hz mV (max) dB (min) dB dB nA nA (max) nA/°C IB ΔIOS/ ΔTemp IOS Input Bias Current Input Bias Current Drift vs Temperature Input Offset Current 200 25 32 100 nA nA (max) 3 www.national.com www.DataSheet.in LME49722 LME49722 Symbol Parameter Conditions Typical (Note 6) Common-Mode Input Voltage Range Common-Mode Rejection Differential Input I.


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