IRL3715ZCS

PD - 94783 IRL3715ZCS IRL3715ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET VDSS RDS(on) max 20V 11m: Qg 7.0nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D2Pak IRL3715ZCS TO-262 IRL3715ZCL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 50 36 Units V A c g g 200 45 23 0.30 -55 to + 175 W/°C °C W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Typ. Max. 3.33 40 Units °C/W f ––– ––– Notes  through … are on page 11 www.irf.com 1 9/15/03 www.DataSheet.in IRL3715ZCS/L Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Sou...