RADIATION HARDENED LOGIC LEVEL POWER MOSFET
PD-97291
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number IRHLYS7...
Description
PD-97291
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number IRHLYS77034CM IRHLYS73034CM Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 20A* 20A*
2N7607T3 IRHLYS77034CM 60V, N-CHANNEL
TECHNOLOGY
Low-Ohmic TO-257AA
International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLYS797034CM
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC =100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction S...
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