IRF7705GPBF

PD- 96142A IRF7705GPbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( < 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free HEXFET® Power MOSFET VDSS -30V RDS(on) max (mW) 18 @VGS = -10V 30 @VGS = -4.5V ID -8.0A -6.0A Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de9 ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB ' & % $ 'Ã2Ã9 &Ã2ÃT %Ã2ÃT $Ã2Ã9 B T signer with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -8.0 -6.0 -30 1.5 0.96 0.012 ± 20 -55 to + 150 Units V A W W/°C V °C Thermal Resistance Parame...