PD- 94101A
IRF7342D2
FETKY MOSFET & Schottky Diode
l l l l l
TM
Co-packaged HEXFET® Power MOSFET and Schottky Diode Id...
PD- 94101A
IRF7342D2
FETKY MOSFET &
Schottky Diode
l l l l l
TM
Co-packaged HEXFET® Power MOSFET and
Schottky Diode Ideal For Buck
Regulator Applications P-Channel HEXFET® Low VF
Schottky Rectifier SO-8 Footprint
A A S G
1
8
K K D D
VDSS = -55V RDS(on) = 105mΩ
Schottky Vf = 0.61V
2
7
3
6
4
5
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board space saving solution for switching
regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop
Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current À Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range
Maximum
-3.4 -2.7 -27 2.0 1.3 16 ± 20 -5.0 -55 to +150
Units
A
W mW/°C V V/ns °C
Thermal...