Power MOSFET
PD -93799A
IRF7324
HEXFET® Power MOSFET
q q q q q q
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Lo...
Description
PD -93799A
IRF7324
HEXFET® Power MOSFET
q q q q q q
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.1mm) Available in Tape & Reel 2.5V Rated
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
VDSS = -20V RDS(on) = 0.018Ω
3
6
4
5
Description
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 -9.0 -7.1 -71 2.0 1.3 16 ± 12 -55 to + 150
Units
V A W W mW/°C V °C
Thermal Resistance
Parameter
RθJA
Max.
Units
62.5 °C/W
Maximum Junction-to-Ambient
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1
6/26/00
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IRF7324
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage For...
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