Preliminary Datasheet
RJK0212DPA
Silicon N Channel Power MOS FET Power Switching
Features
Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1950-0011 Rev.0.11 Jul 02, 2010
Outline
RENESAS Package code: PWSN0008DC-A (Pac...
