RJH60F6DPK

Preliminary Datasheet RJH60F6DPK Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C) REJ03G1940-0100 Rev.1.00 Jun 18, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW  5 s, duty cycle  1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC j-c j-c Tj Tstg Ratings 600 ±30 85 45 170 100 297.6 0.42 2.0 150 –55 to +150 Unit V V A A A A W °C/W °C/W °C °C REJ03G1940-0100 Rev.1.00 Jun 18, 2010 Page 1 of 6 www.DataSheet.in RJH60F6DPK Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitanc...