RJE0601JPE

Preliminary Datasheet RJE0601JPE Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. REJ03G1906-0200 Rev.2.00 Jun 29, 2010 Features      High endurance capability against to the short circuit. Built-in the over temperature shut-down circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS: 22 m Typ, 27 m Max (VGS = –10 V) Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) D G 1 2 3 Temperature Sensing Circuit Gate Resistor Current Limitation Circuit Gate Shut-down Circuit 1. Gate 2. Drain (Flange) 3. Source Latch Circuit S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage VGSS Drain current ID Body-drain diode reverse drain current IDR Avalanche current IAP Note 1 Avalanche energy EAR Note 2 Channel dissipation Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25C 2. Tch = 25C, Rg  50  3. It provides by the current limitation lower bound value. Ratings –60 –16 2.5 –40 Note 3 –40 –15 964 50 150 –55 to +150 Unit V V V A A A mJ ...