R2J25953

Preliminary Datasheet R2J25953 H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET Description The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package. R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Features  For Automotive application  Built-in low on state resistance MOS FET. (Pch: 16 m Max., Nch: 11 m Max.)  Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.  Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD) and Overcurrent Detection.  Built-in diagnostic function.  Built-in cross-conduction protection.  Small Surface mounting package: HSOP-36 Block Diagram Reverce battery protection device VBAT Vz Cp M VB1 VBS1 VCC VBS2 VB2 Pch MOS Pch MOS Dr. LVI, OVD Overcurrent detection Dr. OUT1 TSD OUT2 Dr. Nch MOS Logic Dr. Nch MOS PGND1 PWM INA INB DIAG LGND V30 C1 PGND2 Pull-up in the Microcomputer R1 power supply Microcomputer R07DS0044EJ0300 Rev.3.00 Sep 01, 2010 Page 1 of 16 www.DataSheet.in R2J25953 Preliminary Outline OUT1 NC VBS1 GND V30 GND VBS2 VCC NC OUT2 NC VB1 NC VB2 19 36 TAB1 TAB3 TAB2 OUT1 1 18 NC OUT1 PWM INA INB GND LGND GND DIAG NC OUT2 NC Pin Description Pin No. 1 to 3 4 5 6 7 8 9 10 11 12 13 14 15 16 to 18 19 to 21 Pin name PGND1 NC OUT1 PWM INA INB GND LGND GND DIAG NC OUT2 NC PGND2 VB2 Description Power GND1 No connect In...