Polar Power MOSFET HiPerFET
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH18N90P IXFT18N90P I...
Description
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS
VDSS ID25
RDS(on) trr
= = ≤ ≤
900V 18A 600mΩ 300ns
TO-247 (IXFH)
G
D
S
D (TAB)
TO-268 (IXFT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 TO-268 PLUS220 types Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 900 900 ± 30 ± 40 18 36 9 800 15 540 -55 ... +150 150 -55 ... +150 300 260 1.13/10 11..65/2.5..14.6 6 4 4 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g g G = Gate S = Source Features
z z z z
G S D (TAB)
PLUS220 (IXFV)
G
D
S
D (TAB)
PLUS220SMD (IXFV_S)
G
S
D (TAB)
D = Drain TAB = Drain
International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Diode
Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.0 6.0 ± 100 V V nA
z z z
High Power Density Easy to Mount Space Savings
Applications
z
25 μA 1.5 mA 600 mΩ
z z z z
VGS = 10V, ID = 0.5 ID25, Note 1
Switched-Mode an...
Similar Datasheet