IRF7855PBF

PD - 97173 IRF7855PbF Applications l Primary Side Switch in Bridge Topology in Universal Input (36-75Vin) Isolated DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters l Secondary Side Synchronous Rectification Switch for 15Vout l Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS 60V RDS(on) max 9.4m:@VGS = 10V ID 12A S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Max. 60 ± 20 12 8.7 97 2.5 0.02 9.9 -55 to + 150 Units V A c e W W/°C V/ns °C h Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) Typ. Max. 20 50 Units °C/W ei ––– ––– Notes  through ‡ are on page 8 www.irf.com 1 01/05/06 www.DataSheet.in IRF7855PbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakd...