IRF7854PBF

PD - 97172 IRF7854PbF Applications l Primary Side Switch in Bridge or twoswitch forward topologies using 48V (±10%) or 36V to 60V ETSI range inputs. l Secondary Side Synchronous Rectification Switch for 12Vout l Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS 80V RDS(on) max 13.4m:@VGS = 10V ID 10A S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Max. 80 ± 20 10 7.9 79 2.5 0.02 11 -55 to + 150 Units V A c W W/°C V/ns °C h Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) Typ. Max. 20 50 Units °C/W ei ––– ––– Notes  through ‡ are on page 8 www.irf.com 1 01/05/06 www.DataSheet.in IRF7854PbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Sourc...