N-Channel Silicon MOSFET General-Purpose Switching Device Applications
Ordering number : ENA1176
FTD2017M
SANYO Semiconductors
DATA SHEET
FTD2017M
Features
• • • • •
N-Channel Silicon MO...
Description
Ordering number : ENA1176
FTD2017M
SANYO Semiconductors
DATA SHEET
FTD2017M
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm 2✕0.8mm) 1unit When mounted on ceramic substrate (1000mm 2✕0.8mm) Conditions Ratings 20 ±12 6 40 1.2 1.25 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS= ±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A 0.5 5 8.5 Ratings min 20 1 ±10 1.3 typ max Unit V
μA μA
V S
Marking : D2017M
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Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The pr...
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