Type
IPUH6N03LB
IPSH6N03LB
OptiMOS®2 Power-Transistor
Package Marking Qualified according to JEDEC1) for target applications N-channel - Logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max ID 30 6.3 50 V mΩ A
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