IPSH6N03LB

Type IPUH6N03LB IPSH6N03LB OptiMOS®2 Power-Transistor Package Marking Qualified according to JEDEC1) for target applications N-channel - Logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID 30 6.3 50 V mΩ A Type IPUH6N03LB IPSH6N03LB Package Marking PG-TO251-3 H6N03LB PG-TO251-3-11 H6N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ID T C=25 °C2) T C=100 °C 50 50 200 160 6 ±20 A Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 83 -55 ... 175 55/175/56 J-STD20 and JESD22 Rev. 0.3 page 1 2006-05-15 www.DataSheet.in IPUH6N03LB Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=40 µA V DS...