RUM002N02

1.2V Drive Nch MOSFET RUM002N02 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) VMT3 zApplications Switching zFeatures 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. (1)Gate (2)Souce (3)Drain Abbreviated symbol : QR zInner circuit (3) zPackaging specifications Package Type Code Basic ordering unit (pieces) RUM002N02 Taping (1) T2L 8000 ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗2 (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP∗1 PD∗2 Tch Tstg Limits 20 ±8 ±200 ±400 150 150 −55 to +150 Unit V V mA mA mW °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 833 Unit °C / W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.07 - Rev.A www.DataSheet.in RUM002N02 zElectrical characteristics (Ta=25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Symbol IGSS V(BR)DSS IDSS VGS(th) ∗ RDS(on) Min. − 20 − 0.3 − − − − Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacita...