HMC-APH634

HMC-APH634 v00.0110 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications This HMC-APH634 is ideal for: Short Haul / High Capacity Links Features High Gain: 12 dB High P1dB: +19 dBm Bias Supply: +4V 50 Ohm Matched Input/Output Die Size: 2.57 x 1.70 x 0.05 mm 3 LINEAR & POWER AMPLIFIERS - CHIP Wireless LAN Bridges Military & Space E-Band Communication Systems Functional Diagram General Description The HMC-APH634 is a two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 81 and 86 GHz. The HMC-APH634 provides 12 dB of gain, and an output power of up to +20 dBm at 1 dB compression from a +4V supply. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH634 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1dB Compression (P1dB) Supply Current (Idd1+Idd2) [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1=Vgg2 between -0.8V to +0.3V (typ. -0.1V) to achieve Idd total = 240mA 7 Min. Typ. 81 - 86 12...