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HMC-APH478 Dataheets PDF



Part Number HMC-APH478
Manufacturers Hittite Microwave Corporation
Logo Hittite Microwave Corporation
Description GaAs HEMT MMIC POWER AMPLIFIER
Datasheet HMC-APH478 DatasheetHMC-APH478 Datasheet (PDF)

HMC-APH478 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz Features Output IP3: +38.5 dBm P1dB: +30 dBm Gain: 17.5 dB Supply Voltage: +5V 50 Ohm Matched Input/Output Typical Applications This HMC-APH478 is ideal for: • Point-to-Point Radios 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • Military & Space Die Size: 3.92 x 1.28 x 0.1 mm Functional Diagram General Description The HMC-APH478 is a two stage GaAs HEMT MMIC 1 Watt Power Amplifier which operates bet.

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HMC-APH478 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz Features Output IP3: +38.5 dBm P1dB: +30 dBm Gain: 17.5 dB Supply Voltage: +5V 50 Ohm Matched Input/Output Typical Applications This HMC-APH478 is ideal for: • Point-to-Point Radios 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • Military & Space Die Size: 3.92 x 1.28 x 0.1 mm Functional Diagram General Description The HMC-APH478 is a two stage GaAs HEMT MMIC 1 Watt Power Amplifier which operates between 18 and 20 GHz. The HMC-APH478 provides 17.5 dB of gain, and an output power of +30 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH478 GaAs HEMT MMIC 1 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 900 mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output power for 1dB Compression (P1dB) Output Third Order Intercept (IP3) Supply Current (Idd1+Idd2) 28.5 16 Min. Typ. 18 - 20 17.5 8 5 30 38.5 900 Max. Units GHz dB dB dB dBm dBm mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 300 mA, Idd2 = 600 mA 3 - 190 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH478 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz Linear Gain vs. Frequency 20 Fixtured Pout vs. Frequency 40 38 POUT (dBm) 36 34 32 P1dB P3dB OIP3 18 GAIN (dB) 16 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 191 14 12 30 28 16 17 18 19 20 21 22 23 18 19 20 FREQUENCY (GHz) 21 22 FREQUENCY (GHz) 10 Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 0 -4 RETURN LOSS (dB) RETURN LOSS (dB) 16 17 18 19 20 21 22 23 -5 -8 -10 -12 -15 -16 -20 -20 FREQUENCY (GHz) -25 16 17 18 19 20 21 22 23 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-APH478 v02.0208 GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage +5.5 Vdc -1 to +0.3 Vdc 330 mA 660 mA 13 dBm 32.7 °C/W -65 to +150 °C 180 °C 3 LINEAR & POWER AMPLIFIERS - CHIP Drain Bias Current (Stage 1) Drain Bias Current (Stage 2) RF Input Power Thermal Resistance (Channel to die bottom) Storage Temperature Channel Temperature ELECTROSTATIC SENSITIVE DEVICE OBSERVE HAN.


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