HMC-APH403

HMC-APH403 v03.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 45 GHz Features Output IP3: +32 dBm P1dB: +23 dBm Gain: 21 dB Supply Voltage: +5V 50 Ohm Matched Input/Output Typical Applications This HMC-APH403 is ideal for: Point-to-Point Radios 3 LINEAR & POWER AMPLIFIERS - CHIP Point-to-Multi-Point Radios Military & Space Die Size: 2.76 x 1.03 x 0.1 mm Functional Diagram General Description The HMC-APH403 is a three stage GaAs HEMT MMIC Medium Power Amplifier which operates between 37 and 45 GHz. The HMC-APH403 provides 21 dB of gain, and an output power of +23 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH403 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations [1], TA = +25° C Vdd1=Vdd2=Vdd3= 5V, Idd1+ Idd2 + Idd3= 475 mA [2]] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) Supply Current (Idd1 + Idd2 + Idd3) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ -0.5V) to achie...