9971GD

AP9971GD RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Fast Switching Speed ▼ PDIP-8 Package G2 D1 D1 D2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 50mΩ 5A PDIP-8 S2 G1 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 Rating 60 +25 5 3.2 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 200809223 AP9971GD Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VGS=4.5V, ID=2.5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=60V, VGS=0V VGS=+25V ID=5A VDS=48V VGS=10V VDS=30V ID=5A RG=3.3Ω,VGS=10V RD=6Ω VGS=0V VDS=25V f=1.0...