BUK664R4-55C

DataSheet.in BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 1 — 17 August 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 55 100 204 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 4.2 4.9 mΩ DataSheet.in NXP Semiconductors BUK664R4-55C N-channel TrenchMOS intermediate level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 263 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 100 A; Vsup ≤ 55 V; drain-source RGS...