BUK663R5-55C

DataSheet.in BUK663R5-55C N-channel TrenchMOS FET Rev. 01 — 3 August 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V Automotive systems „ ABS/ESP „ Engine management „ HVAC „ Motors, lamps and solenoid control „ Transmission control „ Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 [1] Min - Typ 2.7 Max Unit 55 100 263 3.5 V A W mΩ total power dissipation Tmb = 25 °C; see Figure 2 drain-source on-state resistance non-repetitive drain-source avalanche energy VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 5 ID = 100 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Static characteristics Avalanche ruggedness EDS(AL)S 551 mJ [1] Continuous current is limited by package. DataSheet.in NXP Semiconductors BUK663R5-55C N-channel TrenchMOS FET 2. Pinning information Table ...